Synthesis, Structure, and Properties of New Perovskite PbVO₃
The new perovskite PbVO3 was synthesized under high-temperature and high-pressure conditions. Its crystal structure (a = 3.80005(6) Å, c = 4.6703(1) Å, Z = 1, S.G. P4mm) contains isolated layers of corner-shared VO5 pyramids, which are formed instead of octahedra due to a strong tetragonal distortion (c/a = 1.23). The lead atom is shifted out of the center of the unit cell toward one of two [VO2]-layers due to the influence of the lone pair. This new perovskite exhibits a semiconductor-like ρ(T) dependence down to 2 K. This behavior can be qualitatively explained by taking into account strong electron correlations in electronic structure calculations.
R. V. Shpanchenko and V. V. Chernaya and A. A. Tsirlin and P. S. Chizhov and D. E. Sklovsky and E. V. Antipov and E. P. Khlybov and V. Y. Pomjakushin and A. M. Balagurov and J. E. Medvedeva and E. E. Kaul and C. Geibel, "Synthesis, Structure, and Properties of New Perovskite PbVO₃," Chemistry of Materials, vol. 16, no. 17, pp. 3267-3273, American Chemical Society (ACS), Aug 2004.
The definitive version is available at https://doi.org/10.1021/cm049310x
Keywords and Phrases
Cell Culture; Crystal Structure; Electronic Structure; Lead Compounds; Synthesis (Chemical); Electron Correlation; Tetragonal Distortion; Perovskite; Lead; Vanadium Derivative; Geometry; Reaction Analysis; Temperature Dependence; X Ray Powder Diffraction
International Standard Serial Number (ISSN)
Article - Journal
© 2004 American Chemical Society (ACS), All rights reserved.
01 Aug 2004