Terahertz Wave Emission from Intrinsic Josephson Junctions in High- T_C Superconductors

Author

Lutfi Ozyuzer
Yilmaz Simsek
Hasan Koseoglu
Fulya Turkoglu
Cihan Kurter, Missouri University of Science and TechnologyFollow
Ulrich W. Welp
Alexei E. Koshelev
Kenneth E. Gray, Missouri University of Science and TechnologyFollow
Waikwong Kwok
Takashi Yamamoto
Kazuo Kadowaki
Yu I. Koval
Huabing Wang
Paul H. Muller

Abstract

Recently, we experimentally demonstrated that rectangular mesa structures of intrinsic Josephson junctions (IJJ) in Bi₂Sr₂CaCu ₂O_8+d (Bi2212) can be used as a compact solid-state generator of continuous, coherent and polarized terahertz (THz) radiation. In the present work, we will exhibit tall mesas (over 600 junctions) which were fabricated using UV lithography, e-beam lithography with photoresist and e-beam lithography with a Ti selective etching technique. We will present measurements of the c-axis resistance as a function of temperature and of current-voltage characteristics of THz emitting mesas with lateral sizes ranging from 30 x 300 to 100 x 300νm². Furthermore, we will discuss the dependence of the characteristics of the mesa structures on the oxygen doping level of the Bi2212 crystals. We will also experimentally show that the voltage-frequency relation of the ac Josephson effect has to match the cavity resonance for successful emission.

Recommended Citation

L. Ozyuzer and Y. Simsek and H. Koseoglu and F. Turkoglu and C. Kurter and U. W. Welp and A. E. Koshelev and K. E. Gray and W. Kwok and T. Yamamoto and K. Kadowaki and Y. I. Koval and H. Wang and P. H. Muller, "Terahertz Wave Emission from Intrinsic Josephson Junctions in High- T_C Superconductors," Superconductor Science and Technology, vol. 22, no. 11, IOP Publishing Ltd., Oct 2009.

The definitive version is available at https://doi.org/10.1088/0953-2048/22/11/114009

Department(s)

Physics

Second Department

Geosciences and Geological and Petroleum Engineering

Keywords and Phrases

Ac Josephson effect; Bi-2212; Cavity resonances; e-Beam lithography; High-T; Intrinsic Josephson junction; Lateral sizes; Mesa structure; Oxygen doping; Selective etching; Solid-state generator; Terahertz radiation; Terahertz waves; UV lithography; Electron beam lithography; Josephson junction devices; Current voltage characteristics

International Standard Serial Number (ISSN)

0953-2048

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2009 IOP Publishing Ltd., All rights reserved.

Publication Date

01 Oct 2009