Large Enhancement of Spontaneous Emission Rates of Inas Quantum Dots in GaAs Microdisks
We have studied the enhancement of spontaneous emission rates for InAs quantum dots embedded in GaAs microdisks in a time-resolved photoluminescence experiment. Inhomogeneous broadening of the quantum dot energy levels and random spatial distribution of the quantum dots in a microdisk lead to a broad distribution of the spontaneous emission rates. Using a nonnegative least-norm algorithm, we extract the distribution of spontaneous emission rates from the temporal decay of emission intensity. The maximum spontaneous emission enhancement factor exceeds 10.
W. Fang et al., "Large Enhancement of Spontaneous Emission Rates of Inas Quantum Dots in GaAs Microdisks," Optics Letters, vol. 27, no. 11, pp. 948-950, Optical Society of America (OSA), Jun 2002.
The definitive version is available at https://doi.org/10.1364/OL.27.000948
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© 2002 Optical Society of America (OSA), All rights reserved.
01 Jun 2002