Abstract
Preliminary evidence of enhanced etching of rhenium by XeF2 under the influence of an electric field (3.36 GV/m) is presented. Scanning electron microscope photographs of sharp rhenium tips show etching of at least 0.40 µm ±0.07 in 32 min at the point of maximum electric field, indicating a field enhanced etching rate of 13 nm/min ±2. A control experiment shows a maximum spontaneous etching of rhenium by XeF2 of 0.1 µm ±0.07 in 30 min, indicating a maximum possible spontaneous etching rate of rhenium by XeF2 of 3 nm/min ±2. The spontaneous rate of tungsten by XeF2 reported in the literature is 0.2 nm/min.
Recommended Citation
M. Aghazarian et al., "Preliminary Evidence of Field Induced Rhenium Etching by XeF₂ at High Vacuum," Journal of Applied Physics, American Institute of Physics (AIP), Feb 2008.
The definitive version is available at https://doi.org/10.1063/1.2871473
Department(s)
Nuclear Engineering and Radiation Science
Sponsor(s)
Oak Ridge National Laboratory
United States. Department of Energy
Keywords and Phrases
Etching; Refractories; Rhenium; Xenon Compounds
International Standard Serial Number (ISSN)
0021-8979
Document Type
Article - Journal
Document Version
Final Version
File Type
text
Language(s)
English
Rights
© 2008 American Institute of Physics (AIP), All rights reserved.
Publication Date
01 Feb 2008
