Utilization of Photoconductive Gain in A-Si:H Devices for Radiation Detection
The photoconductive gain mechanism in a-Si:H was investigated in connection with applications to radiation detection. Various device types such as p-i-n, n-i-n and n-i-p-i-n structures were fabricated and tested. Photoconductive gain was measured in two time scales: one for short pulses of visible light (< 1 µsec) which simulates the transit of an energetic charged particle, and the other for rather long pulses of light (1 msec) which simulates x-ray exposure in medical imaging. We used two definitions of photoconductive gain: current gain and charge gain which is an integration of the current gain. We found typical charge gains of 3 ~ 9 for short pulses and a few hundred for long pulses at a dark current level of 10 mA/cm². Various gain results are discussed in terms of the device structure, applied bias and dark current.
H. Lee et al., "Utilization of Photoconductive Gain in A-Si:H Devices for Radiation Detection," Materials Research Society Symposium - Proceedings, Cambridge University Press, Jan 1995.
The definitive version is available at https://doi.org/10.1557/PROC-377-767
Proceedings of the 1995 MRS Spring Meeting
Nuclear Engineering and Radiation Science
Article - Conference proceedings
© 1995 Cambridge University Press, All rights reserved.
01 Jan 1995