Simulation Study of Blue InGaN Multiple Quantum Well Light-Emitting Diodes with Different Hole Injection Layers
Abstract
InGaN-based light-emitting diodes with p-GaN and p-AlGaN hole injection layers are numerically studied using the APSYS simulation software. The simulation results indicate that light-emitting diodes with p-AlGaN hole injection layers show superior optical and electrical performance, such as an increase in light output power, a reduction in current leakage and alleviation of efficiency droop. These improvements can be attributed to the p-AlGaN serving as hole injection layers, which can alleviate the band bending induced by the polarization field, thereby improving both the hole injection efficiency and the electron blocking efficiency. © 2012 Chinese Physical Society and IOP Publishing Ltd.
Recommended Citation
L. Wu and S. Li and C. Liu and H. Wang and T. Lu and K. Zhang and G. Xiao and Y. Zhou and S. Zheng and Y. Yin and X. Yang, "Simulation Study of Blue InGaN Multiple Quantum Well Light-Emitting Diodes with Different Hole Injection Layers," Chinese Physics B, Institute of Physics - IOP Publishing, Jan 2012.
The definitive version is available at https://doi.org/10.1088/1674-1056/21/6/068506
Department(s)
Mechanical and Aerospace Engineering
Keywords and Phrases
GaN-Based Light-Emitting Diodes; Hole Injection Layer; Injection Efficiency
International Standard Serial Number (ISSN)
1674-1056
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2012 Institute of Physics - IOP Publishing, All rights reserved.
Publication Date
01 Jan 2012
