Analysis of Parasitic Resistance in Double Gate FinFETs with Different Fin Lengths
A significant increase in parasitic resistance (R PARA) fluctuation is observed when S/D length is getting smaller than the characteristic length (L TRANS). Resistance change evaluated on double gate finFETs with various fin lengths shows an excellent agreement between the experimental data and the analytical model. Further R PARA fluctuation improvement can be realized by optimizing the L TRANS. © 2011 IEEE.
X. Yang and K. Maitra and C. Yeh and P. Zeitzoff and M. Raymond and P. Kulkarni and M. Wang and T. Yamashita and V. S. Basker and T. E. Standaert and S. Samavedam, "Analysis of Parasitic Resistance in Double Gate FinFETs with Different Fin Lengths," Proceedings - IEEE International SOI Conference, Institute of Electrical and Electronics Engineers (IEEE), Jan 2011.
The definitive version is available at https://doi.org/10.1109/SOI.2011.6081799
2011 IEEE International SOI Conference, SOI 2011
Mechanical and Aerospace Engineering
IEEE Electron Devices Society (EDS)
Article - Conference proceedings
© 2011 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.
01 Jan 2011