Influence of the Grain Boundaries on Conductivity of Yttrium Stabilized Zirconia


The influence of the grain boundaries on ionic conductivity of yttrium stabilized zirconia (YSZ) was investigated. Initial nanocrystalline samples were prepared using tape casting. The samples were annealed at different temperatures in the range from 1000 to 1400oC to overlap the grain size from 100nm to ~10fYm and investigated using impedance spectroscopy. Two distinct semicircles were found on all zirconia samples corresponding to the influence of the grain and grain boundary on the resistance. Activation energies for both resistances are very close (1.00 and 1.03eV correspondingly). The grain resistance does not change significantly during the annealing process, but grain boundary resistance decreases after high temperature annealing which courses decrease in overall resistance of the material. The calculations show that the decrease in the grain boundary resistance is connected only with increase in the grain size and specific grain boundary resistance (per unit surface area of grain boundary) does not change with annealing.


Materials Science and Engineering

Keywords and Phrases

Annealing; Grain Boundaries; Grain Size; Grains; Nanocrystals; Yttria Stabilized Zirconia; Yttrium; Zirconium Dioxide

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Article - Conference proceedings

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© 2005 Materials Research Society, All rights reserved.

Publication Date

01 Jan 2005

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