Spontaneous Electrochemical Deposition of Copper from Organic Solutions on TaSiN
Abstract
Uniform and high density copper seed crystals were deposited on TaSiN barrier layers using a novel process called Metal Immersion Deposition from Organic Solution (MIDOS). The process evolved from an earlier process named galvanic stripping, which was used for metal ion separation and recovery from solvent extraction solutions. The mechanism for the deposition is based on electrochemical displacement reactions in which the more noble metal deposits on the surface of less noble metal. The organic media used are strong polarizers and have low electrical and ionic conductivity. The metal crystals deposited from such solution have special morphologies compared to those from aqueous solutions and will catalyze subsequent electroless Cu metal build up.
Recommended Citation
J. Li et al., "Spontaneous Electrochemical Deposition of Copper from Organic Solutions on TaSiN," Surface Engineering: Proceedings of the 4th International Surface Engineering Congress, ASM International, Jan 2006.
Department(s)
Materials Science and Engineering
Keywords and Phrases
Barrier Layers; Electroless Plating; Immersion Coating; Ionic Conductivity; Metal Crystals; Noble Metals; Solvent Extraction; Tantalum Nitrides
Document Type
Article - Conference proceedings
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2006 ASM International, All rights reserved.
Publication Date
01 Jan 2006