Use of Stress to Produce Highly Oriented Tetragonal Lead Zirconate Titanate (PZT 40/60) Thin Films and Resulting Electrical Properties
Abstract
Thin films of Pb(Zr0.4TiO.6)O3 produced by chemical solution deposition were used to study the effects of stress from different platinized single-crystal substrates on film orientation and resulting electrical properties. Films deposited on MgO preferred a (001) orientation due to compressive stress on the film during cooling through the Curie temperature (TC). Films on Al2O3 were under minimal stress at TC, resulting in a mixture of orientations. Those on Si preferred a (111) orientation due to templating from the bottom electrode. Films oriented in the 〈001〉 direction demonstrated lower dielectric constants and higher Pr and −d31 values than (111) films.
Recommended Citation
G. L. Brennecka et al., "Use of Stress to Produce Highly Oriented Tetragonal Lead Zirconate Titanate (PZT 40/60) Thin Films and Resulting Electrical Properties," Journal of the American Ceramic Society, American Ceramic Society, Aug 2004.
Department(s)
Materials Science and Engineering
Sponsor(s)
United States. Department of Energy
Keywords and Phrases
Lead Zirconate Titanate; Stress; Thin Films
International Standard Serial Number (ISSN)
0002-7820; 1551-2916
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2004 American Ceramic Society, All rights reserved.
Publication Date
01 Aug 2004
