Electron Beam Induced Crystallization of Sputter Deposited Amorphous Alumina Thin Films
Crystallization of amorphous alumina (Al2O3) in a thin film capacitor structure was induced by the electron beam of a transmission electron microscope (TEM). The crystallization was initially observed while collecting selected area diffraction (SAD) patterns after 2 min of beam exposure at an accelerating voltage of 200 keV and a beam current density of 13.0 A/cm2. After 16 min of beam exposure, distinct ring patterns associated with crystal growth were evident in the SAD pattern. Bright field and dark field TEM images confirmed that crystallization occurred, with crystals growing up to ~50 nm in diameter.
J. Murray et al., "Electron Beam Induced Crystallization of Sputter Deposited Amorphous Alumina Thin Films," Materials Letters, Elsevier, May 2012.
The definitive version is available at https://doi.org/10.1016/j.matlet.2012.01.039
Materials Science and Engineering
Keywords and Phrases
Crystallization; Amorphous; Alumina; Thin-Film; Capacitor
International Standard Serial Number (ISSN)
Article - Journal
© 2012 Elsevier, All rights reserved.
01 May 2012