The resistive switching properties of HfO2/ZrO2 nanolayers with the total thickness of 16 nm prepared using atomic layer deposition (ALD) were investigated. Current-voltage behavior, pulse time mode measurement, retention and endurance tests were carried out to characterize the memristive (memory-resistive) properties. Resistive switching was observed in all nanolayer stacks, and the set voltage (Vset) decreased with increasing the number of layers (i.e., increasing number of hafnia-zirconia interfaces). Grazing incidence x-ray diffraction (GI-XRD) results demonstrate that the hafnia transforms from monoclinic to orthorhombic crystal structure during the post metallization annealing. Shifts in the binding energy of the x-ray photoelectron spectra (XPS) implies the existence of hafnia and zirconia suboxide (HfO2-δ and ZrO2-δ). Moreover, the blocking nature of the inserted oxide/oxide interfaces serves as a barrier to oxygen ion/vacancy migration. It is shown that memristive/insulating nanostructures like HfO2/ZrO2 can help modulate the resistive switching of memristor-based devices.
L. Tang et al., "Resistive switching in atomic layer deposited HfO2/ZrO2 nanolayer stacks," Applied Surface Science, vol. 515, article no. 146015, Elsevier, Jun 2020.
The definitive version is available at https://doi.org/10.1016/j.apsusc.2020.146015
Materials Science and Engineering
Keywords and Phrases
HfO /ZrO 2 2; Interfaces; Nanolayer; Resistive switching
International Standard Serial Number (ISSN)
Article - Journal
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15 Jun 2020