Spin injection and precession in bulk wurtzite n-GaN with different doping densities are demonstrated with a ferromagnetic MnAs contact using the three-terminal Hanle measurement technique. Theoretical analysis using minimum fitting parameters indicates that the spin accumulation is primarily in the n-GaN channel rather than at the ferromagnet (FM)/semiconductor (SC) interface states. Spin relaxation in GaN is interpreted in terms of the D'yakonov-Perel mechanism, yielding a maximum spin lifetime of 44 ps and a spin diffusion length of 175 nm at room temperature. Our results indicate that epitaxial ferromagnetic MnAs is a suitable high-temperature spin injector for GaN.
S. Jahangir et al., "Spin Diffusion in Bulk GaN Measured with MnAs Spin Injector," Physical Review B, American Physical Society (APS), Jul 2012.
The definitive version is available at https://doi.org/10.1103/PhysRevB.86.035315
Materials Science and Engineering
International Standard Serial Number (ISSN)
Article - Journal
© 2012 American Physical Society (APS), All rights reserved.
01 Jul 2012