Capacitive Properties and Structure of RuO₂-HfO₂ Films Prepared by Thermal Decomposition Method
Binary RuO2-HfO2 films on Ti substrates were prepared by a thermal decomposition method. cyclic voltammetric and charge/discharge properties of the RuO2-HfO2 electrodes were characterized. It was determined that the incorporation of HfO2 into RuO 2 greatly improved the capacitive properties of the material. The RuO2-HfO2 electrodes showed excellent cyclic stability, with no decay in charge capability during 1000 CV cycles in acidic solution. A nominal content of 50 mol% RuO2 and 50 mol% HfO2 gave the highest specific capacitance of 789.3 F/g (RuO2). The excellent capacitive properties and stability were related to the hydrous amorphous mixed-oxides formed in the film. This work proves that high capacitive performance of RuO2-based electrode materials can be obtained by thermal decomposition, even with the retained chloride in the film.
X. Liu et al., "Capacitive Properties and Structure of RuO₂-HfO₂ Films Prepared by Thermal Decomposition Method," Physics Procedia, vol. 50, pp. 416 - 420, Elsevier BV, Oct 2013.
The definitive version is available at https://doi.org/10.1016/j.phpro.2013.11.064
20th International Federation for Heat Treatment and Surface Engineering Congress (2012: Oct. 23-25, Beijing, China)
Materials Science and Engineering
Keywords and Phrases
Film; RuO2-HfO2; Supercapacitor; Thermal decomposition method
International Standard Serial Number (ISSN)
Article - Conference proceedings
© 2013 Elsevier BV, All rights reserved.
01 Oct 2013