Abstract
An acetate-based polymeric precursor for producing yttrium-stabilized zirconia (YSZ) was developed. The precursor was prepared under ambient conditions and contains only yttrium and zirconium cations. Dense, crack-free films were fabricated with this precursor on alumina substrates at a rate of 60 nm per deposition, producing polycrystalline YSZ at temperatures as low as 600 °C. Grain growth in thin YSZ films followed Arrhenius equation with an activation energy approximately 0.45 eV. The residual strain in YSZ films decreased with increasing annealing temperature from 600 to 900 °C.
Recommended Citation
R. M. Smith et al., "Novel Yttrium-Stabilized Zirconia Polymeric Precursor for the Fabrication of Thin Films," Journal of Materials Research, Materials Research Society, Sep 2004.
The definitive version is available at https://doi.org/10.1557/JMR.2004.0352
Department(s)
Materials Science and Engineering
Sponsor(s)
United States. Department of Energy
Keywords and Phrases
Yttrium; Yttrium Stabilized Zirconia; Zirconia
International Standard Serial Number (ISSN)
0884-2914
Document Type
Article - Journal
Document Version
Final Version
File Type
text
Language(s)
English
Rights
© 2004 Materials Research Society, All rights reserved.
Publication Date
01 Sep 2004
