The Removal of Surface Silica and Its Effect on the Nitridation of High-purity Silicon

Author

M. N. Rahaman, Missouri University of Science and TechnologyFollow
A. J. Moulson

Editor(s)

Carter, C. B.

Abstract

Compacts of high-purity silicon powder were pretreated in hydrogen or argon to remove the surface silica and then nitrided in gas at atmospheric pressure and at 1623 K. The kinetics of nitridation were monitored continuously, the fracture surfaces of the nitrided samples examined using scanning electron microscopy and the alpha/beta nitride contents determined by X-ray diffraction. The experiments confirm that high-purity silicon powder, usually regarded as unreactive, can be rapidly nitrided to nearly complete conversion following pretreatments designed to remove the silica layer. The results suggest that nitridation occurred by the reaction of silicon vapour with nitrogen gas resulting in the deposition of massive Si3N4.

Recommended Citation

M. N. Rahaman and A. J. Moulson, "The Removal of Surface Silica and Its Effect on the Nitridation of High-purity Silicon," Journal of Materials Science, Springer Verlag, Jan 1984.

The definitive version is available at https://doi.org/10.1007/BF00553008

Department(s)

Materials Science and Engineering

Keywords and Phrases

Polymer Sciences; Industrial Chemistry/Chemical Engineering; Characterization and Evaluation Materials; Mechanics

International Standard Serial Number (ISSN)

0022-2461

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 1984 Springer Verlag, All rights reserved.

Publication Date

01 Jan 1984