"The resistance switching phenomenon has been extensively studied in metal oxide thin films for its applications in the non-volatile memory industry. The research presented here focuses on magnetite thin films which have been electrodeposited onto gold-sputtered glass substrates via the electrochemical reduction of a Fe(III)-triethanolamine complex in aqueous alkaline solution. Magnetite was chosen for its usefulness in read/write memory applications, its high Curie temperature, its metal-to-insulator (Verwey) transition, and its half-metallic character and attendant spintronic properties. Resistance switching behavior caused by a reversible redox reaction at the anode was observed in the films, demonstrating that electrodeposited films show the same characteristic behavior observed in films deposited via other methods. Electrochemical methods, as well as scanning electron microscopy and X-ray diffraction, were used to characterize the films"--Abstract, page iii.
Switzer, Jay A., 1950-
Medvedeva, Julia E.
Brow, Richard K.
Materials Science and Engineering
M.S. in Materials Science and Engineering
Missouri University of Science and Technology
vi, 42 pages
© 2010 Samantha Glen Matthews, All rights reserved.
Thesis - Restricted Access
Electric resistors, Film
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Matthews, Samantha Glen, "Resistance switching in electrodeposited magnetite thin films" (2010). Masters Theses. 5023.
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