"The study herein detailed was made to determine the effect of varying the oxygen partial pressure of a Czochralski type crystal pulling furnace using conventional hardware and remelt silicon on the level of incorporated oxygen and carbon in the single crystal. The oxygen partial pressure was measured by a zirconia type oxygen sensor and controlled by additions of hydrogen or carbon dioxide to the argon purge gas. The oxygen and carbon incorporation measurements were made by the Fourier Transform Infrared (FTIR) method, using the American Standard for Testing Materials (ASTM) standard calibration.
During the study boules which were zero dislocation for at least 6.8 inches and single crystal for at least 9.9 inches of their length were grown for oxygen and carbon incorporation measurement purposes. Some of the boules exceeded 20 inches in overall length, and one boule was zero dislocation over its entire length of 25.1 inches.
The system oxygen partial pressure was varied from 10 to the minus 6.5 to 10 to the minus 14.5 atmospheres. Oxygen incorporation data were available for crystals grown in oxygen partial pressures ranging from 10 to the minus 7.5 to 10 to the minus 13.5 atmospheres. The oxygen incorporation did not significantly change despite oxygen partial pressure changes of 6 orders of magnitude. All of the carbon incorporation data and part of the oxygen incorporation data were obscured by the excessive doping of the remelt silicon used as starting material in this study"--Abstract pp. ii-iii
P. Darrell Ownby
Don M. Sparlin
Harlan U. Anderson
Materials Science and Engineering
M.S. in Ceramic Engineering
University of Missouri--Rolla
ix, 80 pages
© 1986 Paul Shane Carter, All rights reserved.
Thesis - Open Access
Print OCLC #
Carter, Paul Shane, "The effect of oxygen partial pressure on oxygen and carbon incorporation in Czochralski grown single crystal silicon" (1986). Masters Theses. 425.