"Electron spin resonance (ESR) has been used to study the temperature dependence of the formation of an amorphous damaged layer produced by ion implantation in silicon.
Undoped silicon wafers were implanted with N+, Ar+, and Kr+ ions at 20 keV and dose rates less than .36 µa/cm2. Implant temperatures ranged from room temperature to 250°C. ESR measurements were made at room temperature on these wafers. The only ESR signal found was that associated with amorphous silicon. The ESR signal amplitude for a given ion and temperature increased approximately linearly with dose up to a critical dose D(T). For doses greater than D(T), the signal usually increased very little, indicating that a completely amorphous layer had been formed.
The critical dose for a given ion species increased markedly with temperature; it tended toward infinity near a finite temperature T∞. Such a temperature dependence is predicted by a theoretical model. The experimental critical dose data has been analyzed in terms of that model, and the data agrees with the model fairly well. However, certain results indicate that there are mechanisms affecting the production of amorphous silicon that are not accounted for by the model. The identity of these mechanisms is considered"--Abstract, page ii.
Hale, Edward Boyd
James, William Joseph
Snow, William R.
M.S. in Physics
United States. Air Force. Office of Scientific Research
National Science Foundation (U.S.)
University of Missouri--Rolla
vii, 72 pages
© 1973 Gary Keith Woodward, All rights reserved.
Thesis - Restricted Access
Ion implantation -- Computer simulation
Semiconductor doping -- Computer simulation
Electron paramagnetic resonance spectroscopy
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Woodward, Gary Keith, "Temperature dependence of the formation of an amorphous layer in ion-implanted silicon" (1973). Masters Theses. 3510.
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