Phase extent of GaAs, GaSb, and InSb, and solid solubility in the system GaAs-GaSb determined by the lattice constant-density method.

Author

Chang Don Kim

Abstract

"The lattice constant of the homogeneous gallium arsenide varies from 5.65298A⁰ to 5.65J26A⁰ at 25° c with a change of composition in the range from 49-935 to 50.015 atomic percent gallium. The lattice constants of g allium and indium antimonide are 6.09592A⁰ and 6.47876A⁰ at 25 ° c, respectively and the extent of the phases of gallium and indium antimonide could not be found in this work.

The thermal expansion coefficient of gallium arsenide is 6.4 x 10^-6/⁰ C in the range between 10 and 65° c regardless of composition, ar.d those of gallium and indium antimonide are 7-5 x 10^-6 and 5.5 x 10^-6/⁰ C in the range between 10 and 6o0 c.

The density of gallium arsenide is 5.3 18 + 0.003 g/ cm³ at 25° c for the Siemens sample of stoichiometric composition and 5.3 157 + 0.0003 g/cm³ for the Alcoa sample at 25° c.

Alcoa gallium arsenide was found to have vacant sites in its crystalline structure and the perfection of the structures of Siemens gallium arsenide (No. 1) and gallium and indium antimonide could not be evaluated since ln'-nl was smaller than the propagated error, An'.

A complete solid solubility was found in the quasi-binary system of GaAs-GaSb. It was observed that Vegard's law held in the region from Oto 40 mol % GaAs and that there was a negative deviation starting from this point to 100% GaAs"-Abstract pp. 1-2

Advisor(s)

Martin E. Straumanis

Committee Member(s)

William Joseph James
Andrew H. Larson
Hollis P. Leighly, Jr.

Department(s)

Materials Science and Engineering

Degree Name

M.S. in Metallurgical Engineering

Publisher

Missouri School of Mines and Metallurgy

Publication Date

1963

Pagination

90 pages

Note about bibliography

Includes bibliographical references (pages 88-89)

Rights

© 1963 Chang Don Kim, All rights reserved.

Document Type

Thesis - Open Access

File Type

text

Language

English

Thesis Number

T 1523

Print OCLC #

5954454

Electronic OCLC #

1492656984

Recommended Citation

Kim, Chang Don, "Phase extent of GaAs, GaSb, and InSb, and solid solubility in the system GaAs-GaSb determined by the lattice constant-density method." (1963). Masters Theses. 2827.
https://scholarsmine.mst.edu/masters_theses/2827