Electrical Properties of SrBi₂Ta₂O₉ Ferroelectric Thin Films at Low Temperature

Pingxiong Yang
David L. Carroll
John Ballato
Robert W. Schwartz, Missouri University of Science and Technology

This document has been relocated to http://scholarsmine.mst.edu/mec_aereng_facwork/3425

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The temperature dependence of electrical properties for SrBi2Ta2O9 thin film capacitors with platinum electrodes (Pt/SBT/Pt) on silicon wafers was studied from 10 to 300 K. with a decrease in temperature from 300 to 200 K, the remanent polarization of the thin films shows about an 11% reduction from its 300 K value; however, it is reduced by about 87% reduction from its 200 K value when the temperature drops from 200 to 100 K. with a decrease to 200 K, the polarization fatigue was significant, and the capacitor shows an approximate 29% reduction in polarization from its initial value following 10^10 cycles. The dielectric response and leakage current of the thin films were also studied over the same lower temperature region. These results are helpful in the understanding of the fatigue-free behavior observed in SrBi2Ta2O9 thin films at room temperature and provide additional insight into their use for ferroelectric memory applications.