Modeling of Intra-Cell Defects in CMOS SRAM

Waleed K. Al-Assadi, Missouri University of Science and Technology
Y. K. Malaiya
A. P. Jayasumana

This document has been relocated to

There were 24 downloads as of 27 Jun 2016.


The effect of defects within a single cell of a static random access memory (SRAM) is examined. All major types of faults, including bridging, transistor stuck-open and stuck-on, are examined. A significant fraction of all faults cause high IDDQ values to be observed. Faults leading to inter-cell coupling are identified.