This investigation has characterized the effects of fast neutron bombardment on a typical n-p-n transistor (2N914) of a common emitter amplifier operating at high-frequencies (>100 MHz) by means of s-parameter measurements from 120 MHz to 350 MHz, inclusive, every 10 MHz. The changes in the four (4) s-parameters and the trends and consequences of neutron bombardment are examined pictorially on graphs. The general effect of fast neutron bombardment is to decrease the magnitude of each s-parameter for frequencies below z. fT (where z = (O/1013)0.1). However, if the device is operating above z fT, the magnitudes of s11 (input reflection coefficient) and s21 (forward insertion gain, which may be approximated by hfe) increased above the pre-irradiation values, which would not be expected from previous work carried out at d-c and low frequencies. Copyright © 1970 by The Institute of Electrical and Electronics Engineers, Inc.
C. A. Goben and Y. P. Han, "Nuclear Radiation Enhancement Of Transistor Forward Gain At High Frequencies," IEEE Transactions on Nuclear Science, vol. 17, no. 6, pp. 380 - 388, Institute of Electrical and Electronics Engineers, Jan 1970.
The definitive version is available at https://doi.org/10.1109/TNS.1970.4325821
Electrical and Computer Engineering
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01 Jan 1970