A Novel Technique of Analyzing Multiexponential Transients for DLTS Spectra
A new method is presented here to experimentally decompose capacitance transients into the appropriate components from the closely-spaced deep trap states. Using the Temperature Dependent Pulsewidth-DLTS (TDP-DLTS) technique, we show that two closely-spaced DX centers in Se-doped Al0.6Ga0.4As laser diodes can be successfully separated. We produce an Arrhenius plot for each individual component, which yield the thermal activation energies, emission rates and capture cross sections of the two closely spaced traps. Without any complicated mathematics or program, TDP-DLTS provides an accurate, convenient and consistent method for decomposing the multiexponential transients of DLTS spectra.
C. W. Wang and C. Wu, "A Novel Technique of Analyzing Multiexponential Transients for DLTS Spectra," Solid-State Electronics, vol. 35, no. 12, pp. 1771 - 1777, Elsevier, Dec 1992.
The definitive version is available at https://doi.org/10.1016/0038-1101(92)90259-F
Electrical and Computer Engineering
Keywords and Phrases
Semiconducting aluminum compounds; Semiconducting gallium arsenide; Semiconducting selenium; Spectroscopic analysis, Arrhenius plot; Capacitance transients decomposition; Closely spaced traps; Deep level transient spectroscopy (DLTS); DX center separation; Multiexponential transients; Temperature dependent pulsewidth-DLTS technique; Thermal activation energies, Semiconductor lasers
International Standard Serial Number (ISSN)
Article - Journal
© 1992 Elsevier, All rights reserved.
01 Dec 1992