Abstract
The introduction of phosphorus trichloride into the AP-MOVPE growth of InP has been found to dramatically improve the regrowth adjacent to mesa structures. By suppressing growth in the [100] direction and enhancing growth in the [311] directions planar regrowth is achieved. Polycrystalline deposits on dielectric masks can also be completely suppressed
Recommended Citation
M. J. Harlow et al., "The Influence of PCl 3 on Planarisation and Selectivity of InP Regrowth by Atmospheric Pressure MOVPE," Proceedings of the 7th International Conference on Indium Phosphide and Related Materials, 1995, Institute of Electrical and Electronics Engineers (IEEE), Jan 1995.
The definitive version is available at https://doi.org/10.1109/ICIPRM.1995.522146
Meeting Name
7th International Conference on Indium Phosphide and Related Materials, 1995
Department(s)
Electrical and Computer Engineering
Keywords and Phrases
AP-MOVPE Growth; III-V Semiconductors; InP; PCl 3; PCl 3 Influence; [100] Direction Growth Suppression; [311] Direction Growth Enhancement; Atmospheric Pressure MOVPE; Dielectric Masks; Indium Compounds; Mesa Structures; Planar Regrowth; Polycrystalline Deposit Suppression; Regrowth Planarisation; Regrowth Selectivity; Scanning Electron Microscopy; Semiconductor Growth; Surface Structure; Vapour Phase Epitaxial Growth
Document Type
Article - Conference proceedings
Document Version
Final Version
File Type
text
Language(s)
English
Rights
© 1995 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.
Publication Date
01 Jan 1995
