A variety of power devices are available to designers, each with specific advantages and limitations. For inverters, typically an IGBT combined with a p-i-n diode is used to obtain high current density. Recent developments in high-voltage MOSFETs support other alternatives. For example, a MOSFET can be paralleled with an IGBT to reduce losses at low currents, while the IGBT carries the load at high currents. The current work evaluates conduction losses in this configuration, showing applicability to generic inverters.
J. W. Kimball and P. L. Chapman, "Evaluating Conduction Loss of a Parallel IGBT-MOSFET Combination," Proceedings of the IEEE Industry Applications Conference/39th IAS Annual Meeting (2004, Seattle, WA), vol. 2, pp. 1233 - 1237, Institute of Electrical and Electronics Engineers (IEEE), Oct 2004.
The definitive version is available at https://doi.org/10.1109/IAS.2004.1348570
IEEE Industry Applications Conference/39th IAS Annual Meeting (2004: Oct. 3-7, Seattle, WA)
Electrical and Computer Engineering
Keywords and Phrases
IGBT; MOSFET; Conduction Loss; Inverters; P-I-N Diode; Power Devices; Current Density; Electric Breakdown; Electric Inverters; Electric Losses; Electric Switches; Insulated Gate Bipolar Transistors; Thermal Load; Switching Loss; Thermal Response; MOSFET Devices
International Standard Book Number (ISBN)
International Standard Serial Number (ISSN)
Article - Conference proceedings
© 2004 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.
01 Oct 2004