Chemically Amplified Resists: A Lithographic Comparison of Acid Generating Species
Deep-UV (240-250 nm) lithography is of one the most promising new lithographic techniques for patterning devices with 0.35-0.5 μm structures. Chemically amplified resists have been reported to meet the necessary requirements of both excimer laser and Hg source-based exposure tools. The chemistry of one family of these materials involves the photogeneration of organic acid catalysts from 2,6-dinitrobenzyl esters, which, upon mild heating, effect the removal of a t-butoxy carbonyl protecting group from poly(t-butoxycarbonyloxy-α-methylstyrene), [poly(t-BOC-α-methylstyrene)]. The thermal behavior of the esters has been examined, and the quantum yield determined for selected examples. A lithographic evaluation of resists based upon several organic ester acid precursors and poly(t-BOC-α-methylstyrene) has been made. Sensitivities ranging from 2 to 100 mJ/cm2 in the deep-UV region have been observed, and 0.5 μm resolution has been demonstrated, using a contact printer equipped with a 248 nm laser source.
Neenan, T. X., Houlihan, F. M., Reichmanis, E., Kometani, J. M., & Bachman, B. (1989). Chemically Amplified Resists: A Lithographic Comparison of Acid Generating Species. Proceedings of the 1989 SPIE Conference (1989, San Jose, CA), 1086, pp. 2 SPIE--The International Society for Optical Engineering.
The definitive version is available at https://doi.org/10.1117/12.953012
1989 SPIE Conference (1989: Feb. 26-Mar. 3, San Jose, CA)
Article - Conference proceedings
© 1989 SPIE--The International Society for Optical Engineering, All rights reserved.
03 Mar 1989