Title

Chemically Amplified Resists: A Lithographic Comparison of Acid Generating Species

Abstract

Deep-UV (240-250 nm) lithography is of one the most promising new lithographic techniques for patterning devices with 0.35-0.5 μm structures. Chemically amplified resists have been reported to meet the necessary requirements of both excimer laser and Hg source-based exposure tools. The chemistry of one family of these materials involves the photogeneration of organic acid catalysts from 2,6-dinitrobenzyl esters, which, upon mild heating, effect the removal of a t-butoxy carbonyl protecting group from poly(t-butoxycarbonyloxy-α-methylstyrene), [poly(t-BOC-α-methylstyrene)]. The thermal behavior of the esters has been examined, and the quantum yield determined for selected examples. A lithographic evaluation of resists based upon several organic ester acid precursors and poly(t-BOC-α-methylstyrene) has been made. Sensitivities ranging from 2 to 100 mJ/cm2 in the deep-UV region have been observed, and 0.5 μm resolution has been demonstrated, using a contact printer equipped with a 248 nm laser source.

Meeting Name

1989 SPIE Conference (1989: Feb. 26-Mar. 3, San Jose, CA)

Department(s)

Economics

Document Type

Article - Conference proceedings

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 1989 SPIE--The International Society for Optical Engineering, All rights reserved.

Publication Date

03 Mar 1989

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