Use of voids to stabilize dislocation networks at elevated temperatures in aluminum single crystals
Materials Science and Engineering
Ph. D. in Metallurgical Engineering
University of Missouri--Rolla
ix, 87 pages
© 1991 Purushottam Ganpatrao Manusmare, All rights reserved.
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Full-text not available: Request this publication directly from Missouri S&T Library or contact your local library.http://merlin.lib.umsystem.edu/record=b2446349~S5
Manusmare, Purushottam G., "Use of voids to stabilize dislocation networks at elevated temperatures in aluminum single crystals" (1991). Doctoral Dissertations. 846.
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