Doctoral Dissertations


In this work, the resistance switching behavior of electrodeposited cuprous oxide (Cu2O) thin films in Au/Cu2O/top electrode (Pt, Au-Pd, Al) cells was studied. After an initial FORMING process, the fabricated cells show reversible switching between a low resistance state (16.6 Ω) and a high resistance state (0.4 x 106 Ω). Changing the resistance states in cuprous oxide films depends on the magnitude of the applied voltage which corresponds to unipolar resistance switching behavior of this material. The endurance and retention tests indicate a potential application of the fabricated cells for nonvolatile resistance switching random access memory (RRAM). The results suggest formation and rupture of one or several nanoscale copper filaments as the resistance switching mechanism in the cuprous oxide films. At high electric voltage in the as-deposited state of Au/Cu2O/Au-Pd cell structure, the conduction behavior follows Poole-Frenkel emission. Various parameters, such as the compliance current, the cuprous oxide microstructure, the cuprous oxide thickness, top electrode area, and top electrode material, affect the resistance switching characteristics. The required FORMING voltage is higher for Au/Cu2O/Al cell compared with the Au/Cu2O/Pt which is related to the Schottky behavior of Al contact with Cu2O. Cu2O nanowires in Au-Pt/ Cu2O/Au-Pt cell also show resistance switching behavior, indicating scalable potential of this cell for usage as RRAM. After an initial FORMING process under an electric field of 3 x 106 V/m, the Cu2O nanowire is switched to the LRS. During the FORMING process physical damages are observed in the cell, which may be caused by Joule heating and gas evolution"--Abstract, page iii.


Switzer, Jay A., 1950-

Committee Member(s)

Huebner, Wayne
Miller, F. Scott, 1956-
Moats, Michael S.
Zawodniok, Maciej Jan, 1975-


Materials Science and Engineering

Degree Name

Ph. D. in Materials Science and Engineering


Missouri University of Science and Technology

Publication Date

Summer 2015

Journal article titles appearing in thesis/dissertation

  • Copper nanofilament formation during unipolar resistance switching of electrodeposited cuprous oxide
  • The effective parameters on resistance switching of electrodeposited cuprous oxide thin films
  • Resistance switching of electrodeposited Cu2O nanowires


xiii, 91 pages

Note about bibliography

Includes bibliographic references.


© 2015 Sanaz Yazdanparast, All rights reserved.

Document Type

Dissertation - Open Access

File Type




Subject Headings

Electric resistors, Film
Thin films
Electrochemical metallizing
Cuprous oxide

Thesis Number

T 10772

Electronic OCLC #