Doctoral Dissertations

Analysis of laser diode bar degradation


"Laser diode bars capable of producing over 100 Watts of continuous output power are finding increased use in military and industrial applications. These devices have a number of degradation mechanisms, ranging from the propagation of dislocations in the epitaxial layers used to create the p-n junction to oxidation of the mirror facets. In addition, degradation mechanisms caused by the packaging process are also common. In order to understand and quantify these degradation mechanisms, a spectrometer system and associated data analysis software have been developed that allow for in-depth analysis of each emitter in a laser diode bar. This system provides information related to facet defects, packaging-induced strain, thermal variations, and intra-cavity defects. The system has been used to quantify the relative strengths of various degradation mechanisms in a set of laser diode packages"--Abstract, page iii.


Olson, Ronald E.

Committee Member(s)

Stephens, Edward F.
Peacher, Jerry
DuBois, R. D. (Robert D.), 1951-
Leventhal, Jacob J. (Jacob Joseph), 1937-



Degree Name

Ph. D. in Physics


Northrop Grumman Information Technology (Firm)


University of Missouri--Rolla

Publication Date

Fall 2006


xi, 111 pages

Note about bibliography

Includes bibliographical references (pages 109-110).


© 2006 C. Ryan Feeler, All rights reserved.

Document Type

Dissertation - Citation

File Type




Subject Headings

Diodes, Semiconductor
Light emitting diodes -- Reliability
Semiconductor lasers -- Reliability

Thesis Number

T 9053

Print OCLC #


Link to Catalog Record

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