Analysis of laser diode bar degradation
"Laser diode bars capable of producing over 100 Watts of continuous output power are finding increased use in military and industrial applications. These devices have a number of degradation mechanisms, ranging from the propagation of dislocations in the epitaxial layers used to create the p-n junction to oxidation of the mirror facets. In addition, degradation mechanisms caused by the packaging process are also common. In order to understand and quantify these degradation mechanisms, a spectrometer system and associated data analysis software have been developed that allow for in-depth analysis of each emitter in a laser diode bar. This system provides information related to facet defects, packaging-induced strain, thermal variations, and intra-cavity defects. The system has been used to quantify the relative strengths of various degradation mechanisms in a set of laser diode packages"--Abstract, page iii.
Olson, Ronald E.
Stephens, Edward F.
DuBois, R. D. (Robert D.), 1951-
Leventhal, Jacob J. (Jacob Joseph), 1937-
Ph. D. in Physics
Northrop Grumman Information Technology (Firm)
University of Missouri--Rolla
xi, 111 pages
© 2006 C. Ryan Feeler, All rights reserved.
Dissertation - Citation
Light emitting diodes -- Reliability
Semiconductor lasers -- Reliability
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Link to Catalog Record
Full-text not available: Request this publication directly from Missouri S&T Library or contact your local library.http://merlin.lib.umsystem.edu/record=b6000116~S5
Feeler, C. Ryan, "Analysis of laser diode bar degradation" (2006). Doctoral Dissertations. 1727.
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