Doctoral Dissertations


Quantitative non-destructive study of sub-micron defects in very large scale integrated-circuit silicon using transmitted and reflected infra-red laser scattering


"The limits and capabilities of the Scanning Infra-Red Microscope (SIRM) and the Optical Precipitate Profiler (OPP) to detect oxygen precipitate defects in silicon were investigated. Two sets of specimens were made and studied. One set had wafers containing the same bulk defect density, but had different precipitate growth thermal treatments. These treatments resulted in defects of different mean sizes ranging form 30 to 150 nm. The other set had defects of approximately the same size, but they had different defect densities ranging from about 1 x 10⁹ defects/cm³ to 1 x 10¹¹ defects/cm³. The first set was carefully characterized by transmission electron microscopy (TEM) to obtain an accurate size distribution of the defects in each sample. The defect densities were then measured by the OPP, the SIRM, and the cleave-and-etch technique and compared with the TEM measurements. In the second sample the defect density was measured only by the cleave-and-etch technique and then by the SIRM"--Abstract, page iii.


Hale, Edward Boyd
Fraundorf, Phil

Committee Member(s)

Holzer, J. C.
Feldman, B.
James, W. J.
Pringle, Oran Allan



Degree Name

Ph. D. in Physics


MEMC Electronic Materials


Dissertation completed as part of a cooperative degree program with the University of Missouri--Rolla and the University of Missouri--St. Louis.


University of Missouri--Rolla

Publication Date

Summer 1996


xvi, 171 pages

Note about bibliography

Includes bibliographical references (pages 167-170).


© 1996 Luciano Mule'Stagno, All rights reserved.

Document Type

Dissertation - Citation

File Type




Subject Headings

Laser beams -- Scattering
Silicon crystals -- Growth

Thesis Number

T 7197

Print OCLC #


Link to Catalog Record

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