Effect of Cu Grain Boundary Sliding on TSV Extrusion
This study investigates the effect of grain boundary sliding (GBS) and material properties on the extrusion of through-silicon via. A finite element model is set up to evaluate via extrusion during thermal cycling taking into account the actual grain structures near the via top. The elastic anisotropy and plasticity are considered for each Cu grain, and the grain orientation obtained from experimental measurements is directly mapped into the FEA model. GBS is described by a cohesive zone model based on a frictional traction separation relationship. Based on GBS, the via extrusion behavior is deduced for two different Cu/Si interfacial conditions: fully bonded and free sliding, corresponding to the upper and lower bounds of the extrusion. In each case, the effect of GBS is evaluated by analyzing the plasticity and extrusion profiles. The results indicate that GBS plays a dominant role in determining the magnitude and profile of via extrusion.
C. Wu et al., "Effect of Cu Grain Boundary Sliding on TSV Extrusion," Proceedings of the 2015 Electronic Components and Technology Conference (2015, San Diego, CA), pp. 661 - 665, Institute of Electrical and Electronics Engineers (IEEE), May 2015.
The definitive version is available at https://doi.org/10.1109/ECTC.2015.7159662
2015 Electronic Components and Technology Conference, ECTC (2015: May 26-29, San Diego, CA)
Civil, Architectural and Environmental Engineering
Keywords and Phrases
Electronics packaging; Extrusion; Finite element method; Grain boundaries; Integrated circuit interconnects; Integrated circuit manufacture; Plasticity; Three dimensional integrated circuits; Cohesive zone model; Elastic anisotropy; Grain orientation; Grain-boundary slidings; Interfacial conditions; Through-Silicon-Via; Traction-separation; Upper and lower bounds; Grain boundary sliding
International Standard Book Number (ISBN)
International Standard Serial Number (ISSN)
Article - Conference proceedings
© 2015 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.
01 May 2015