Characterizing Interfacial Sliding of through-Silicon-Via by Nano-Indentation
In this paper, an experimental method is proposed to determine the shear sliding behavior of the interface between a copper through-silicon-via (TSV) and silicon. This interface was loaded in a nano-indentation experiment on specimens that were fabricated using focused-ion-beam milling. The elastic and plastic properties of the copper via were first characterized by micro-pillar compression experiments. The interfacial sliding is described by a cohesive zone model with a traction-separation relation including a linearly elastic part followed by frictional sliding at a constant shear traction. Both analytical and numerical models were developed for extracting the parameters of the traction-separation relation for the shear behavior of the interface. The average critical shear traction required to initiate interfacial sliding was found to be 77.2 MPa and the corresponding relative displacement across the interface was 182.7 nm, while the frictional shear strength was 25 MPa. The traction-separation relation with the extracted parameters may be used to study via extrusion and associated reliability analysis for integrated TSV structures.
C. Wu et al., "Characterizing Interfacial Sliding of through-Silicon-Via by Nano-Indentation," IEEE Transactions on Device and Materials Reliability, vol. 17, no. 2, pp. 355-363, Institute of Electrical and Electronics Engineers (IEEE), Jun 2017.
The definitive version is available at https://doi.org/10.1109/TDMR.2017.2681580
Civil, Architectural and Environmental Engineering
Keywords and Phrases
Copper; Electronics packaging; Friction; Nanoindentation; Reliability analysis; Silicon; Analytical and numerical models; Focused ion beam milling; Interfacial sliding; Micro-pillar compressions; Relative displacement; Through-Silicon-Via; Through-Silicon-Via (TSV); Traction-separation relation; Three dimensional integrated circuits; Through-silicon via
International Standard Serial Number (ISSN)
Article - Journal
© 2017 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.
01 Jun 2017