We report on a positive colossal magnetoresistance (MR) induced by metallization of FeSb2, a nearly magnetic or “Kondo” semiconductor with 3d ions. We discuss the contribution of orbital MR and quantum interference to the enhanced magnetic field response of electrical resistivity.
R. Hu and K. J. Thomas and Y. J. Lee and T. J. Vogt and E. S. Choi and V. F. Mitrovic and R. P. Hermann and F. Grandjean and P. C. Canfield and J. W. Kim and A. I. Goldman and C. Petrovic, "Colossal Positive Magnetoresistance in a Doped Nearly Magnetic Semiconductor," Physical review B: Condensed matter and materials physics, vol. 77, no. 8, American Physical Society (APS), Feb 2008.
The definitive version is available at https://doi.org/10.1103/PhysRevB.77.085212
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© 2008 American Physical Society (APS), All rights reserved.
01 Feb 2008