Growth of Cerium(IV) Oxide Films by the Electrochemical Generation of Base Method
Cerium(IV) oxide films were deposited electrochemically on 430 stainless steel and (100)-oriented highly doped degenerate p-type single-crystal silicon in aqueous solution by the electrogeneration of base method. The as-prepared films were characterized by X-ray diffraction, scanning electron microscopy, and atomic force microscopy. The results demonstrated that the as-deposited material was faceted cerium oxide with the fluorite structure. Grain size of the film was found to increase from 6 to 16 nm when the bath temperature varied from 26 to 80 °C, but to decrease from 18 to 6 nm when the applied current density increased from 0.5 to 3.0 mA cm-2. The films were observed to have no preferred orientation.
Y. Zhou and J. A. Switzer, "Growth of Cerium(IV) Oxide Films by the Electrochemical Generation of Base Method," Journal of Alloys and Compounds, Elsevier, Apr 1996.
The definitive version is available at https://doi.org/10.1016/0925-8388(95)02048-9
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© 1996 Elsevier, All rights reserved.
01 Apr 1996