Negative Differential Resistance in Electrochemically Self-assembled Layered Nanostructures
Resonant tunneling devices are used for ultrahigh-speed applications. In this work, tunnel junctions based on copper metal (Cu) and cuprous oxide (Cu 2O) are electrochemically self-assembled from aqueous solution in an oscillating system. The Cu 2O layer thickness (L) is tuned from 0.8 to 2.8 nm by simply changing the applied current density. The layered structures show sharp negative differential resistance (NDR) signatures at room temperature in perpendicular transport measurements, and the NDR maximum shifts to higher bias with a 1/L 2 dependence as the Cu 2O layer is made thinner. The results are consistent with resonant tunneling from Cu into hole states in the valence band of quantum-confined Cu 2O through thin space - charge regions on each side of the Cu 2O.
J. A. Switzer et al., "Negative Differential Resistance in Electrochemically Self-assembled Layered Nanostructures," The Journal of Physical Chemistry B, American Chemical Society (ACS), Jan 1999.
The definitive version is available at https://doi.org/10.1021/jp983911s
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© 1999 American Chemical Society (ACS), All rights reserved.
01 Jan 1999