Preparation of Uncapped CdSeₓTe₁-ₓ Nanocrystals with Strong Near-IR Tunable Absorption
Semiconducting nanocrystals with near-infrared (NIR) photosensitivity are appealing materials for application as photodetectors and in medical diagnostics. Herein, we report the preparation of composition-tunable, uncapped CdSexTe1-x (x = 0 to 1) nanocrystals by simple mechanical alloying. the resulting ternary CdSexTe1-x (x = 0.25, 0.5, 0.75) nanocrystals with average sizes smaller than 10 nm have zincblende crystal structure, instead of the wurtzite structure commonly obtained by wet chemical routes, and show strong NIR absorption even beyond 1400 nm. While a linear relationship between the lattice parameter and the chemical composition (Se/Te ratio) is observed, indicating the formation of homogeneous alloys, the bandgap energy of the three ternary samples is found to be substantially lower than that of binary CdSe or CdTe nanocrystals, and lower than any ternary CdSeTe reported so far. Existence of a small number of tellurium metal defects in the CdSexTe1-x (x = 0.25, 0.5, 0.75) nanocrystals is confirmed by x-ray diffraction and Raman spectroscopy. Both the optical bowing effect and tellurium metal-induced defects of the mechanically alloyed samples are believed to cause the strong NIR photosensitivity.
S. Li et al., "Preparation of Uncapped CdSeₓTe₁-ₓ Nanocrystals with Strong Near-IR Tunable Absorption," Journal of Electronic Materials, vol. 42, no. 12, pp. 3373-3378, Springer Verlag, Jan 2013.
The definitive version is available at https://doi.org/10.1007/s11664-013-2715-8
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01 Jan 2013