Growth Kinetics and Some Properties of Thick LPE YIG Layers
Three high temperature solutions (HTS) with liquidus temperatures T L = 876°C(1), 980°C(2), and 1005°C (3) were used for the deposition of thick Y 3-uPb uFe 5-tPt tO 12 layers on 20 mm and 50 mm diameter 111 Gd 3Ga 5O 12 substrates and of thin layers on slightly spherically shaped 110 and 211 substrates. The transport resistance δ/D of HTS 1 is larger by a factor 1.8 and the interfacial resistance 1/k by a factor 6.5 compared with those of HTS 3. The kinetic coefficients k st of steps of HTS 1 and those of HTS 2 and HTS 3 differ by about an order of magnitude. Characterization of 111 thick layers is carried out with respect to composition, misfit, magnetic saturation polarization, Curie temperature, and ferromagnetic resonance linewidth. © 1988.
P. Görnert et al., "Growth Kinetics and Some Properties of Thick LPE YIG Layers," Journal of Crystal Growth, Elsevier, Jan 1988.
The definitive version is available at https://doi.org/10.1016/0022-0248(88)90184-4
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© 1988 Elsevier, All rights reserved.
01 Jan 1988