Deep-ultraviolet Antireflective Coating with Improved Conformality, Optical Density, and Etch Rate
Abstract
A new bottom antireflective coating (BARC) for 248 nm lithography is described. The new coating has an optical density of approximately 10/micrometers (k equals 0.41 and n equals 1.482) and plasma etches at rates higher than that of DUV resists depending on the etch conditions. Coating conformality is superior to older generation BARCs, also contributing to improved etch dynamics. Excellent 0.25 micrometers features have been obtained with ESCAP, Acetal and t-BOC type photoresists. The new BARC is spin coated from safe solvents and is spin bowl compatible with EBR and photoresist solvents. ©2003 Copyright SPIE - The International Society for Optical Engineering.
Recommended Citation
D. J. Guerrero et al., "Deep-ultraviolet Antireflective Coating with Improved Conformality, Optical Density, and Etch Rate," Proceedings of SPIE - The International Society for Optical Engineering, SPIE -- The International Society for Optical Engineering, Jan 1998.
The definitive version is available at https://doi.org/10.1117/12.312412
Meeting Name
Proceedings of SPIE - The International Society for Optical Engineering (1998, Santa Clara, CA)
Department(s)
Chemistry
Document Type
Article - Conference proceedings
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 1998 SPIE -- The International Society for Optical Engineering, All rights reserved.
Publication Date
01 Jan 1998
