Screening amorphous ternary metal oxides for radiation-tolerant electron conducting layers
Location
Havener Center, Miner Lounge / Wiese Atrium, 1:30pm-3:30pm
Start Date
4-2-2026 1:30 PM
End Date
4-2-2026 3:30 PM
Presentation Date
April 2, 2026, 1:30pm-3:30 pm
Description
Radiation tolerance in amorphous oxide semiconductors is often attributed to structural disorder, yet the underlying atomistic mechanisms governing damage resilience remain unclear. Here, we demonstrate that the topology of weak-bond networks—rather than disorder alone—controls the response of amorphous ternary metal oxides to radiation. Using molecular dynamics and network-based analysis of In–Ga–Zn–O (IGZO), Ga–In–Sn–O (GITO), and Zn–In–Sn–O (ZITO), we quantify weak-bond connectivity through percolation metrics and largest connected component statistics.
We find that percolating weak-bond networks enable spatially distributed damage, suppressing localized failure and enhancing radiation tolerance. In contrast, clustered weak-bond configurations concentrate damage, leading to structural fragility. This topological distinction directly impacts electronic properties: highly connected networks promote extended pathways for charge transport but can modify conduction bandwidth, whereas clustered networks limit transport through localization effects. Among the studied systems, IGZO exhibits a balanced topology, while GITO shows excessive connectivity and ZITO displays composition-dependent intermediate behavior.
These results establish a direct link between amorphous network topology, radiation response, and electron transport, revealing a fundamental trade-off between conductivity and durability. Our findings provide a design framework for engineering radiation-tolerant electron transport layers in radio voltaic and space-based energy systems through controlled manipulation of density and composition.
Biography
Al Mojahid Afridi is an aspiring physicist currently pursuing his PhD at Missouri University of Science and Technology. He earned his BSc from Jashore University of Science and Technology, where he developed a strong interest in materials science and computational physics. His research focuses on transparent oxide conductors and semiconductors, employing advanced techniques such as ab initio molecular dynamics and first-principles density functional theory to investigate the fundamental properties of disordered materials. His work spans energy materials across both solar and radiative environments, including prior studies on semiconductor systems for solar cell applications. His current research investigates amorphous ternary oxide semiconductors, where he explores how weak-bond network topology—specifically percolation versus clustering—governs electron transport and radiation tolerance. By combining atomistic simulations with network-based analysis, he aims to develop design principles for robust electron transport layers in radiovoltaic and space energy systems.
Meeting Name
2026 - Miners Solving for Tomorrow Research Conference
Department(s)
Physics
Document Type
Poster
Document Version
Final Version
File Type
event
Language(s)
English
Rights
© 2026 The Authors, All rights reserved
Screening amorphous ternary metal oxides for radiation-tolerant electron conducting layers
Havener Center, Miner Lounge / Wiese Atrium, 1:30pm-3:30pm
Radiation tolerance in amorphous oxide semiconductors is often attributed to structural disorder, yet the underlying atomistic mechanisms governing damage resilience remain unclear. Here, we demonstrate that the topology of weak-bond networks—rather than disorder alone—controls the response of amorphous ternary metal oxides to radiation. Using molecular dynamics and network-based analysis of In–Ga–Zn–O (IGZO), Ga–In–Sn–O (GITO), and Zn–In–Sn–O (ZITO), we quantify weak-bond connectivity through percolation metrics and largest connected component statistics.
We find that percolating weak-bond networks enable spatially distributed damage, suppressing localized failure and enhancing radiation tolerance. In contrast, clustered weak-bond configurations concentrate damage, leading to structural fragility. This topological distinction directly impacts electronic properties: highly connected networks promote extended pathways for charge transport but can modify conduction bandwidth, whereas clustered networks limit transport through localization effects. Among the studied systems, IGZO exhibits a balanced topology, while GITO shows excessive connectivity and ZITO displays composition-dependent intermediate behavior.
These results establish a direct link between amorphous network topology, radiation response, and electron transport, revealing a fundamental trade-off between conductivity and durability. Our findings provide a design framework for engineering radiation-tolerant electron transport layers in radio voltaic and space-based energy systems through controlled manipulation of density and composition.
Comments
Advisor: Julia E. Medvedeva, juliaem@mst.edu