Abstract
GaAs junctions are designed and fabricated for beta voltaic batteries. the design is optimized according to the characteristics of GaAs interface states and the diffusion length in the depletion region of GaAs carriers. under an illumination of 10 mCi cm-263Ni, the open circuit voltage of the optimized batteries is about ∼0.3 V. It is found that the GaAs interface states induce depletion layers on P-type GaAs surfaces. the depletion layer along the P+PN+ junction edge isolates the perimeter surface from the bulk junction, which tends to significantly reduce the battery dark current and leads to a high open circuit voltage. the short circuit current density of the optimized junction is about 28 nA cm-2, which indicates a carrier diffusion length of less than 1 μm. the overall results show that multi-layer P+PN+ junctions are the preferred structures for GaAs beta voltaic battery design. © 2011 IOP Publishing Ltd.
Recommended Citation
H. Chen et al., "Design Optimization of GaAs Betavoltaic Batteries," Journal of Physics D: Applied Physics, vol. 44, no. 21, article no. 215303, IOP Publishing, Jun 2011.
The definitive version is available at https://doi.org/10.1088/0022-3727/44/21/215303
Department(s)
Mechanical and Aerospace Engineering
International Standard Serial Number (ISSN)
1361-6463; 0022-3727
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2024 IOP Publishing, All rights reserved.
Publication Date
01 Jun 2011
