Abstract

Selective modification (e.g. defect creation and amorphization) of diamond surfaces is of interests for functional diamond-based semiconductors and devices. Bombarding the diamond surface with high energy radiation sources such as electron, proton, and neutrons, however, often result in detrimental defects in deep bulk regions under the diamond surface. In this study, we utilized high energy carbon ions of 3 MeV to bombard the polycrystalline diamond compact (PDC) specimen. The resultant microstructure of PDCs was investigated using micro Raman spectroscopy. The results show that the carbon bombardment successfully created point defects and amorphization in a shallow region of ∼500 nm deep on the diamond surface. The new method has great potential to allow diamond-based semiconductor devices to be used in numerous applications.

Meeting Name

44th North American Manufacturing Research Conference, NAMRC 44 (2016: Jun. 27-Jul. 1, Blacksburg, VA)

Department(s)

Mechanical and Aerospace Engineering

Keywords and Phrases

Diamond-based semiconductors; Ion Irradiation; Polycrystalline diamond compact; Selective modification

International Standard Serial Number (ISSN)

2351-9789

Document Type

Article - Conference proceedings

Document Version

Final Version

File Type

text

Language(s)

English

Rights

© 2016 The Author(s), All rights reserved.

Creative Commons Licensing

Creative Commons License
This work is licensed under a Creative Commons Attribution-No Derivative Works 4.0 License.

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