Abstract
Selective modification (e.g. defect creation and amorphization) of diamond surfaces is of interests for functional diamond-based semiconductors and devices. Bombarding the diamond surface with high energy radiation sources such as electron, proton, and neutrons, however, often result in detrimental defects in deep bulk regions under the diamond surface. In this study, we utilized high energy carbon ions of 3 MeV to bombard the polycrystalline diamond compact (PDC) specimen. The resultant microstructure of PDCs was investigated using micro Raman spectroscopy. The results show that the carbon bombardment successfully created point defects and amorphization in a shallow region of ∼500 nm deep on the diamond surface. The new method has great potential to allow diamond-based semiconductor devices to be used in numerous applications.
Recommended Citation
M. S. Mutyala et al., "Surface Modification of Polycrystalline Diamond Compacts by Carbon Ion Irradiation," Proceedings of the 44th North American Manufacturing Research Conference (2016, Blacksburg, VA), vol. 5, pp. 634 - 643, Elsevier, Jun 2016.
The definitive version is available at https://doi.org/10.1016/j.promfg.2016.08.052
Meeting Name
44th North American Manufacturing Research Conference, NAMRC 44 (2016: Jun. 27-Jul. 1, Blacksburg, VA)
Department(s)
Mechanical and Aerospace Engineering
Keywords and Phrases
Diamond-based semiconductors; Ion Irradiation; Polycrystalline diamond compact; Selective modification
International Standard Serial Number (ISSN)
2351-9789
Document Type
Article - Conference proceedings
Document Version
Final Version
File Type
text
Language(s)
English
Rights
© 2016 The Author(s), All rights reserved.
Creative Commons Licensing
This work is licensed under a Creative Commons Attribution-No Derivative Works 4.0 License.
Publication Date
01 Jun 2016
