Title

Use of Stress to Produce Highly Oriented Tetragonal Lead Zirconate Titanate (PZT 40/60) Thin Films and Resulting Electrical Properties

Abstract

Thin films of Pb(Zr0.4TiO.6)O3 produced by chemical solution deposition were used to study the effects of stress from different platinized single-crystal substrates on film orientation and resulting electrical properties. Films deposited on MgO preferred a (001) orientation due to compressive stress on the film during cooling through the Curie temperature (TC). Films on Al2O3 were under minimal stress at TC, resulting in a mixture of orientations. Those on Si preferred a (111) orientation due to templating from the bottom electrode. Films oriented in the 〈001〉 direction demonstrated lower dielectric constants and higher Pr and −d31 values than (111) films.

Department(s)

Materials Science and Engineering

Sponsor(s)

United States. Department of Energy

Keywords and Phrases

Lead Zirconate Titanate; Stress; Thin Films

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2004 American Ceramic Society, All rights reserved.


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