In-Situ Growth and Characterization of SiC Fibers during Si Vapor Infiltration Process without Catalysis
SiC fibers were synthesized on the surface of reaction sintered SiC substrate by Si vapor deposition without catalyst at 1700° C for 4. h in the nitrogen atmosphere. SiC fibers were characterized by scanning electron microscopy, transmission electron microscopy and X-ray diffraction. The results indicate that the fibers have β-SiC structure and their diameters are several-hundred nanometers. The length of the SiC fibers is ~1.5-3.0. mm and their growth direction is . Investigation of growth mechanism indicates that the SiC fibers grow via the vapor-solid (VS) growth process.
Q. Li et al., "In-Situ Growth and Characterization of SiC Fibers during Si Vapor Infiltration Process without Catalysis," Ceramics International, vol. 42, no. 13, pp. 15107-15112, Elsevier Ltd, Jun 2016.
The definitive version is available at https://doi.org/10.1016/j.ceramint.2016.06.112
Materials Science and Engineering
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