Abstract

Multilayer, tape cast ceramics are being developed for use in large area, high voltage devices in order to achieve high specific energy densities (>106 J/m3) and physical size reduction. In particular, symmetric Blumleins are desired with the following properties:

  • High voltage hold off (≥ 300 kV)
  • High, nondispersive permittivity: ≈100 to 900
  • Ability to be fabricated into various shapes and sizes
  • Surface flashover inhibition at the edge
  • Ability to be triggered by surface flashover switching

The compositions being pursued are based on pure BaTiO3 dielectrics. Our approach is to add glass phase additions which result in not only near theoretical densities, but also allow for fabrication of more complex geometries through high temperature creep. Variations in the volume fraction and connectivity of the glassy phase allow for direct control of the permittivity as well as energy density. Structures up to 5 inches in diameter have been fabricated and pulse-tested at field strengths over 300 kV/cm. A strong dependence of breakdown strength and permittivity has been observed and correlated with microstructure and the glass composition. This paper presents the interactive effects of manipulation of these variables.

Meeting Name

2000 12th IEEE International Symposium on Applications of Ferroelectrics, 2000

Department(s)

Materials Science and Engineering

Keywords and Phrases

300 KV; 5 In; Barium Compounds; Breakdown Strength; Ceramics; Connectivity; Creep; Dielectric Materials; Electric Breakdown; Energy Density; Flashover; Glass Phase Additions; High-Temperature Creep; Large-Area High-Voltage Device; Microstructure; Multilayer Tape Cast Ceramic; Permittivity; Pulsed Power Technology; Surface Flashover Switching; Symmetric Blumlein; Voltage Hold-Off; Volume Fraction

International Standard Book Number (ISBN)

0-7803-5940-2

International Standard Serial Number (ISSN)

1099-4734

Document Type

Article - Conference proceedings

Document Version

Final Version

File Type

text

Language(s)

English

Rights

© 2000 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.

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