Abstract

An acetate-based polymeric precursor for producing yttrium-stabilized zirconia (YSZ) was developed. The precursor was prepared under ambient conditions and contains only yttrium and zirconium cations. Dense, crack-free films were fabricated with this precursor on alumina substrates at a rate of 60 nm per deposition, producing polycrystalline YSZ at temperatures as low as 600 °C. Grain growth in thin YSZ films followed Arrhenius equation with an activation energy approximately 0.45 eV. The residual strain in YSZ films decreased with increasing annealing temperature from 600 to 900 °C.

Department(s)

Materials Science and Engineering

Sponsor(s)

United States. Department of Energy

Keywords and Phrases

Yttrium; Yttrium Stabilized Zirconia; Zirconia

Document Type

Article - Journal

Document Version

Final Version

File Type

text

Language(s)

English

Rights

© 2004 Materials Research Society, All rights reserved.

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