An acetate-based polymeric precursor for producing yttrium-stabilized zirconia (YSZ) was developed. The precursor was prepared under ambient conditions and contains only yttrium and zirconium cations. Dense, crack-free films were fabricated with this precursor on alumina substrates at a rate of 60 nm per deposition, producing polycrystalline YSZ at temperatures as low as 600 °C. Grain growth in thin YSZ films followed Arrhenius equation with an activation energy approximately 0.45 eV. The residual strain in YSZ films decreased with increasing annealing temperature from 600 to 900 °C.
R. M. Smith et al., "Novel Yttrium-Stabilized Zirconia Polymeric Precursor for the Fabrication of Thin Films," Journal of Materials Research, Materials Research Society, Sep 2004.
The definitive version is available at http://dx.doi.org/10.1557/JMR.2004.0352
Materials Science and Engineering
United States. Department of Energy
Keywords and Phrases
Yttrium; Yttrium Stabilized Zirconia; Zirconia
Article - Journal
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