Keywords and Phrases
Polymeric memory device
"Fabrication of a memory device using one-step/one-pot synthesis for making a PANI (polyaniline)/Au nanocomposite is reported. Although various devices with horizontal and vertical electrode structures were made, the basic structure used consisted of a PANI/Au thin film sandwiched between two electrodes. The ratio of the current in the OFF state to the current in the ON state was seen to be as high as 5000. These devices showed a bistable behavior, which is typical of memory devices. The PANI/Au nanocomposite thin film was constructed right on the electrode using microfabrication techniques with ultraviolet irradiation. The fabrication techniques discussed in this paper are highly scalable for mass production at an industrial scale and show that PANI/Au nanocomposite based memory devices can be readily manufactured by using traditional methods of microfabrication used for making semiconductive electronic memory devices"--Abstract, page iv.
Wang, Jee C.
Blum, Frank D.
Chemical and Biochemical Engineering
M.S. in Chemical Engineering
National Science Foundation (U.S.)
Missouri University of Science and Technology
Journal article titles appearing in thesis/dissertation
- One-pot synthesis of memory devices using polyaniline and gold nanocomposites using various fabrication methods
- One-pot synthesis of a memory device using polyaniline and gold nanocomposites
x, 83 pages
© 2010 Krunal R. Waghela, All rights reserved.
Thesis - Open Access
Library of Congress Subject Headings
Thin films -- Electric properties
Print OCLC #
Electronic OCLC #
Link to Catalog Recordhttp://laurel.lso.missouri.edu/record=b8057372~S5
Waghela, Krunal R., "Fabrication of a memory device using polyaniline nanofibers and gold nanoparticles" (2010). Masters Theses. 4752.