Abstract

Amorphous selenium (a-Se) is a promising semiconductor for a variety of photoconductive applications, predominantly in X-ray detection. In addition, material properties introduce several other potential applications in nonlinear optics. Photodarkening (PD) presents an interesting area of study; when exposed to band-region light, metastable structural changes induce a shift in the band edge and increase tail absorption. In this work, we investigate these effects utilizing a near-infrared (NIR) probe to avoid generating any darkening during beam transmission. We observe an unexpected result; here, we present the effects of band region exposure in NIR transmission (1570 nm). We observe a shift from darkening to lightening as the angle of incidence changes and compare PD with a red probe (633 nm), which does not exhibit this same phenomenon. We discuss the possible mechanisms and the next steps in delving into the physics underlying this behavior. These effects have strong implications for applications in nonlinear optics, memory, and sensing in the NIR.

Department(s)

Electrical and Computer Engineering

Comments

Office of Science, Grant DESC0022343

Keywords and Phrases

Amorphous selenium (a-Se); near-infrared (NIR); nonlinear optics; photodarkening (PD)

International Standard Serial Number (ISSN)

1557-9646; 0018-9383

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2024 Institute of Electrical and Electronics Engineers, All rights reserved.

Publication Date

01 Jan 2024

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