Modeling of the Immunity of ICs to EFTs
Investigation of the immunity of ICs to EFTs is increasingly important. In this paper, an accurate model of a microcontroller is developed and verified. This model consists of two parts: a passive Power Distribution Network (PDN) model and an active I/O protection network model. Measurement methods are designed to extract the parameters of the passive PDN model. The accuracy of the overall model of the IC is verified using both S parameter tests and EFT injection tests. The model is able to accurately predict the voltage and current at power-supply and I/O pins and correctly accounts for the active components of the I/O protection network.
J. Zhang et al., "Modeling of the Immunity of ICs to EFTs," Proceedings of the 2010 IEEE International Symposium on Electromagnetic Compatibility (2010, Fort Lauderdale, FL), pp. 484-489, Institute of Electrical and Electronics Engineers (IEEE), Jul 2010.
The definitive version is available at https://doi.org/10.1109/ISEMC.2010.5711323
2010 IEEE International Symposium on Electromagnetic Compatibility, EMC 2010 (2010: Jul. 25-30, Fort Lauderdale, FL)
Electrical and Computer Engineering
Electromagnetic Compatibility (EMC) Laboratory
Keywords and Phrases
Integrated Circuit Modeling; Semiconductor Device Measurement; Clamps; Power Measurement; Impedance; Pins
International Standard Book Number (ISBN)
International Standard Serial Number (ISSN)
Article - Conference proceedings
© 2010 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.